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Bd911 Transistor

High Power NPN Transistors – ST BD911, Power transistor, NPN polarity, 100V collector emitter breakdown voltage, 100V collector base breakdown voltage, 15A collector current, 90W power, 250 DC current gain, 3MHz transition frequency, TO-220 case, silicon epitaxial-base, suitable for use in power linear and switching applications. Bd911 Transistor

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