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ST IRF630 MOSFET N 200V 9A

N Channel TO-220 Power MOSFETs – ST IRF630, Mesh overlay II power MOSFET, N-Channel type, 200V drain-source breakdown voltage, 0.35R drain-source on-resistance, 9A drain current, 20V gate source voltage, 10ns turn-on time, 75W power, TO-220 case, extremely high dv/dt capability, very low intrinsic capacitances, gate charge minimized, suitable for switching applications, supplied in tube. ST IRF630 MOSFET N 200V 9A

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