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Vishay IRF510 Mosfet N 100V 5.6A

N Channel TO-220 Power MOSFETs – Vishay IRF510, HEXFET power MOSFET, N-Channel type, 100V drain-source breakdown voltage, 0.54R drain-source on-resistance, 5.6A drain current, 20V gate source voltage, 6.9ns turn-on time, 15ns turn-off time, 43W power, TO-220AB case, dynamic dv/dt rating, repetitive avalanche rated, fast switching, ease of paralleling, simple drive requirements. Vishay IRF510 Mosfet N 100V 5.6A

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